Wide Bandgap Based Devices : Design, Fabrication and Applications
Medjdoub, Farid
Wide Bandgap Based Devices : Design, Fabrication and Applications - Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021 - 1 electronic resource (242 p.)
Open Access
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits.
Creative Commons
English
books978-3-0365-0567-1 9783036505664 9783036505671
10.3390/books978-3-0365-0567-1 doi
Technology: general issues
GaN high-electron-mobility transistor (HEMT) ultra-wide band gap GaN-based vertical-cavity surface-emitting laser (VCSEL) composition-graded AlxGa1−xN electron blocking layer (EBL) electron leakage GaN laser diode distributed feedback (DFB) surface gratings sidewall gratings AlGaN/GaN proton irradiation time-dependent dielectric breakdown (TDDB) reliability normally off power cycle test SiC micro-heater chip direct bonded copper (DBC) substrate Ag sinter paste wide band-gap (WBG) thermal resistance amorphous InGaZnO thin-film transistor nitrogen-doping buried-channel stability 4H-SiC turn-off loss ON-state voltage breakdown voltage (BV) IGBT wide-bandgap semiconductor high electron mobility transistors vertical gate structure normally-off operation gallium nitride asymmetric multiple quantum wells barrier thickness InGaN laser diodes optical absorption loss electron leakage current wide band gap semiconductors numerical simulation terahertz Gunn diode grooved-anode diode Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) vertical breakdown voltage buffer trapping effect gallium nitride (GaN) power switching device active power filter (APF) power quality (PQ) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) recessed gate double barrier high-electron-mobility transistors copper metallization millimeter wave wide bandgap semiconductors flexible devices silver nanoring silver nanowire polyol method cosolvent tungsten trioxide film spin coating optical band gap morphology electrochromism self-align hierarchical nanostructures ZnO nanorod/NiO nanosheet photon extraction efficiency photonic emitter wideband HEMT power amplifier jammer system GaN 5G high electron mobility transistors (HEMT) new radio RF front-end AESA radars transmittance distortions optimization GaN-on-GaN schottky barrier diodes high-energy α-particle detection low voltage thick depletion width detectors n/a
Wide Bandgap Based Devices : Design, Fabrication and Applications - Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021 - 1 electronic resource (242 p.)
Open Access
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits.
Creative Commons
English
books978-3-0365-0567-1 9783036505664 9783036505671
10.3390/books978-3-0365-0567-1 doi
Technology: general issues
GaN high-electron-mobility transistor (HEMT) ultra-wide band gap GaN-based vertical-cavity surface-emitting laser (VCSEL) composition-graded AlxGa1−xN electron blocking layer (EBL) electron leakage GaN laser diode distributed feedback (DFB) surface gratings sidewall gratings AlGaN/GaN proton irradiation time-dependent dielectric breakdown (TDDB) reliability normally off power cycle test SiC micro-heater chip direct bonded copper (DBC) substrate Ag sinter paste wide band-gap (WBG) thermal resistance amorphous InGaZnO thin-film transistor nitrogen-doping buried-channel stability 4H-SiC turn-off loss ON-state voltage breakdown voltage (BV) IGBT wide-bandgap semiconductor high electron mobility transistors vertical gate structure normally-off operation gallium nitride asymmetric multiple quantum wells barrier thickness InGaN laser diodes optical absorption loss electron leakage current wide band gap semiconductors numerical simulation terahertz Gunn diode grooved-anode diode Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) vertical breakdown voltage buffer trapping effect gallium nitride (GaN) power switching device active power filter (APF) power quality (PQ) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) recessed gate double barrier high-electron-mobility transistors copper metallization millimeter wave wide bandgap semiconductors flexible devices silver nanoring silver nanowire polyol method cosolvent tungsten trioxide film spin coating optical band gap morphology electrochromism self-align hierarchical nanostructures ZnO nanorod/NiO nanosheet photon extraction efficiency photonic emitter wideband HEMT power amplifier jammer system GaN 5G high electron mobility transistors (HEMT) new radio RF front-end AESA radars transmittance distortions optimization GaN-on-GaN schottky barrier diodes high-energy α-particle detection low voltage thick depletion width detectors n/a