Silicon Carbide - Materials, Processing and Applications in Electronic Devices (Record no. 61934)

MARC details
000 -LEADER
fixed length control field 02690naaaa2200301uu 4500
001 - CONTROL NUMBER
control field https://directory.doabooks.org/handle/20.500.12854/59374
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220220031931.0
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 852
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9789533079684
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.5772/852
Terms of availability doi
041 0# - LANGUAGE CODE
Language code of text/sound track or separate title English
042 ## - AUTHENTICATION CODE
Authentication code dc
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Moumita Mukherjee
Relationship auth
245 10 - TITLE STATEMENT
Title Silicon Carbide - Materials, Processing and Applications in Electronic Devices
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. IntechOpen
Date of publication, distribution, etc. 2011
300 ## - PHYSICAL DESCRIPTION
Extent 1 electronic resource (560 p.)
506 0# - RESTRICTIONS ON ACCESS NOTE
Terms governing access Open Access
Source of term star
Standardized terminology for access restriction Unrestricted online access
520 ## - SUMMARY, ETC.
Summary, etc. Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the “materials” aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
540 ## - TERMS GOVERNING USE AND REPRODUCTION NOTE
Terms governing use and reproduction All rights reserved
-- http://oapen.org/content/about-rights
546 ## - LANGUAGE NOTE
Language note English
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Physical Sciences
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Engineering and Technology
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Materials Science
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Semiconductor
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Electronic Circuits
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://www.intechopen.com/books/silicon-carbide-materials-processing-and-applications-in-electronic-devices">https://www.intechopen.com/books/silicon-carbide-materials-processing-and-applications-in-electronic-devices</a>
Access status 0
Public note DOAB: download the publication
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://directory.doabooks.org/handle/20.500.12854/59374">https://directory.doabooks.org/handle/20.500.12854/59374</a>
Access status 0
Public note DOAB: description of the publication

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