Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications (Record no. 73304)

MARC details
000 -LEADER
fixed length control field 02364naaaa2200313uu 4500
001 - CONTROL NUMBER
control field https://directory.doabooks.org/handle/20.500.12854/45278
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220220072823.0
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number intechopen.71702
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781789236682
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781789236699
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.5772/intechopen.71702
Terms of availability doi
041 0# - LANGUAGE CODE
Language code of text/sound track or separate title English
042 ## - AUTHENTICATION CODE
Authentication code dc
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Yogesh Kumar Sharma
Relationship auth
245 10 - TITLE STATEMENT
Title Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. IntechOpen
Date of publication, distribution, etc. 2018
300 ## - PHYSICAL DESCRIPTION
Extent 1 electronic resource (152 p.)
506 0# - RESTRICTIONS ON ACCESS NOTE
Terms governing access Open Access
Source of term star
Standardized terminology for access restriction Unrestricted online access
520 ## - SUMMARY, ETC.
Summary, etc. SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, ""ICSCRM,"" was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.
540 ## - TERMS GOVERNING USE AND REPRODUCTION NOTE
Terms governing use and reproduction All rights reserved
-- http://oapen.org/content/about-rights
546 ## - LANGUAGE NOTE
Language note English
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Physical Sciences
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Engineering and Technology
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Materials Science
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Semiconductor
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term Electronic Circuits
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://www.intechopen.com/books/disruptive-wide-bandgap-semiconductors-related-technologies-and-their-applications">https://www.intechopen.com/books/disruptive-wide-bandgap-semiconductors-related-technologies-and-their-applications</a>
Access status 0
Public note DOAB: download the publication
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://directory.doabooks.org/handle/20.500.12854/45278">https://directory.doabooks.org/handle/20.500.12854/45278</a>
Access status 0
Public note DOAB: description of the publication

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