Wide Bandgap Semiconductor Based Micro/Nano Devices (Record no. 75479)

MARC details
000 -LEADER
fixed length control field 04159naaaa2200949uu 4500
001 - CONTROL NUMBER
control field https://directory.doabooks.org/handle/20.500.12854/62681
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220220081659.0
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number books978-3-03897-843-5
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783038978435
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783038978428
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.3390/books978-3-03897-843-5
Terms of availability doi
041 0# - LANGUAGE CODE
Language code of text/sound track or separate title English
042 ## - AUTHENTICATION CODE
Authentication code dc
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Seo, Jung-Hun
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245 10 - TITLE STATEMENT
Title Wide Bandgap Semiconductor Based Micro/Nano Devices
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. MDPI - Multidisciplinary Digital Publishing Institute
Date of publication, distribution, etc. 2019
300 ## - PHYSICAL DESCRIPTION
Extent 1 electronic resource (138 p.)
506 0# - RESTRICTIONS ON ACCESS NOTE
Terms governing access Open Access
Source of term star
Standardized terminology for access restriction Unrestricted online access
520 ## - SUMMARY, ETC.
Summary, etc. While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
540 ## - TERMS GOVERNING USE AND REPRODUCTION NOTE
Terms governing use and reproduction Creative Commons
Use and reproduction rights https://creativecommons.org/licenses/by-nc-nd/4.0/
Source of term cc
-- https://creativecommons.org/licenses/by-nc-nd/4.0/
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Language note English
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856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://mdpi.com/books/pdfview/book/1265">https://mdpi.com/books/pdfview/book/1265</a>
Access status 0
Public note DOAB: download the publication
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://directory.doabooks.org/handle/20.500.12854/62681">https://directory.doabooks.org/handle/20.500.12854/62681</a>
Access status 0
Public note DOAB: description of the publication

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