Micro- and Nanotechnology of Wide Bandgap Semiconductors (Record no. 81694)

MARC details
000 -LEADER
fixed length control field 04377naaaa2200817uu 4500
001 - CONTROL NUMBER
control field https://directory.doabooks.org/handle/20.500.12854/77105
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220220103613.0
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number books978-3-0365-1521-2
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783036515229
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783036515212
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.3390/books978-3-0365-1521-2
Terms of availability doi
041 0# - LANGUAGE CODE
Language code of text/sound track or separate title English
042 ## - AUTHENTICATION CODE
Authentication code dc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TB
Source bicssc
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Piotrowska, Anna B.
Relationship edt
245 10 - TITLE STATEMENT
Title Micro- and Nanotechnology of Wide Bandgap Semiconductors
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. Basel, Switzerland
Name of publisher, distributor, etc. MDPI - Multidisciplinary Digital Publishing Institute
Date of publication, distribution, etc. 2021
300 ## - PHYSICAL DESCRIPTION
Extent 1 electronic resource (114 p.)
506 0# - RESTRICTIONS ON ACCESS NOTE
Terms governing access Open Access
Source of term star
Standardized terminology for access restriction Unrestricted online access
520 ## - SUMMARY, ETC.
Summary, etc. Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.
540 ## - TERMS GOVERNING USE AND REPRODUCTION NOTE
Terms governing use and reproduction Creative Commons
Use and reproduction rights https://creativecommons.org/licenses/by/4.0/
Source of term cc
-- https://creativecommons.org/licenses/by/4.0/
546 ## - LANGUAGE NOTE
Language note English
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Technology: general issues
Source of heading or term bicssc
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Uncontrolled term GaN HEMT
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Uncontrolled term self-heating effect
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Uncontrolled term microwave power amplifier
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Uncontrolled term thermal impedance
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Uncontrolled term thermal time constant
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Uncontrolled term thermal equivalent circuit
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Uncontrolled term GaN
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Uncontrolled term crystal growth
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Uncontrolled term ammonothermal method
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Uncontrolled term HVPE
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Uncontrolled term ion implantation
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Uncontrolled term gallium nitride
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Uncontrolled term thermodynamics
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Uncontrolled term ultra-high-pressure annealing
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Uncontrolled term diffusion
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Uncontrolled term diffusion coefficients
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Uncontrolled term molecular beam epitaxy
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Uncontrolled term nitrides
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Uncontrolled term laser diode
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Uncontrolled term tunnel junction
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Uncontrolled term LTE
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Uncontrolled term AlN
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Uncontrolled term AlGaN/GaN
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Uncontrolled term interface state density
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Uncontrolled term conductance-frequency
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Uncontrolled term MISHEMT
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Uncontrolled term gallium nitride nanowires
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Uncontrolled term polarity
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Uncontrolled term Kelvin probe force microscopy
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Uncontrolled term selective area growth
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Uncontrolled term selective epitaxy
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Uncontrolled term AlGaN/GaN heterostructures
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Uncontrolled term edge effects
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Uncontrolled term effective diffusion length
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Uncontrolled term MOVPE
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Uncontrolled term nanowires
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Uncontrolled term AlGaN
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Uncontrolled term LEDs
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Uncontrolled term growth polarity
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Uncontrolled term n/a
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Kamińska, Eliana
Relationship edt
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Wojtasiak, Wojciech
Relationship edt
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Piotrowska, Anna B.
Relationship oth
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Kamińska, Eliana
Relationship oth
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Wojtasiak, Wojciech
Relationship oth
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://mdpi.com/books/pdfview/book/4724">https://mdpi.com/books/pdfview/book/4724</a>
Access status 0
Public note DOAB: download the publication
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://directory.doabooks.org/handle/20.500.12854/77105">https://directory.doabooks.org/handle/20.500.12854/77105</a>
Access status 0
Public note DOAB: description of the publication

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