TY  - GEN
AU  - Li,Qiliang
AU  - Zhu,Hao
TI  - Nanoelectronic Materials, Devices and Modeling
SN  - books978-3-03921-226-2
PY  - 2019///
PB  - MDPI - Multidisciplinary Digital Publishing Institute
KW  - quantum mechanical
KW  - n/a
KW  - neuromorphic computation
KW  - off-current (Ioff)
KW  - double-gate tunnel field-effect-transistor
KW  - topological insulator
KW  - back current blocking layer (BCBL)
KW  - CMOS power amplifier IC
KW  - information integration
KW  - distributed Bragg
KW  - spike-timing-dependent plasticity
KW  - electron affinity
KW  - enhancement-mode
KW  - current collapse
KW  - gallium nitride (GaN)
KW  - band-to-band tunneling
KW  - vertical field-effect transistor (VFET)
KW  - ionic liquid
KW  - luminescent centres
KW  - thermal coupling
KW  - vision localization
KW  - PC1D
KW  - UAV
KW  - ZnO/Si
KW  - dual-switching transistor
KW  - memristor
KW  - field-effect transistor
KW  - higher order synchronization
KW  - shallow trench isolation (STI)
KW  - memristive device
KW  - on-current (Ion)
KW  - low voltage
KW  - reflection transmision method
KW  - dielectric layer
KW  - source/drain (S/D)
KW  - high efficiency
KW  - nanostructure synthesis
KW  - InAlN/GaN heterostructure
KW  - supercapacitor
KW  - high-electron mobility transistor (HEMTs)
KW  - heterojunction
KW  - p-GaN
KW  - recessed channel array transistor (RCAT)
KW  - gate field effect
KW  - charge injection
KW  - saddle FinFET (S-FinFET)
KW  - L-shaped tunnel field-effect-transistor
KW  - conductivity
KW  - energy storage
KW  - hierarchical
KW  - PECVD
KW  - sample grating
KW  - MISHEMT
KW  - bistability
KW  - threshold voltage (VTH)
KW  - bandgap tuning
KW  - oscillatory neural networks
KW  - UV irradiation
KW  - Mott transition
KW  - third harmonic tuning
KW  - topological magnetoelectric effect
KW  - cross-gain modulation
KW  - 2D material
KW  - solar cells
KW  - silicon on insulator (SOI)
KW  - Green’s function
KW  - optoelectronic devices
KW  - semiconductor optical amplifier
KW  - ZnO films
KW  - graphene
KW  - AlGaN/GaN
KW  - polarization effect
KW  - two-photon process
KW  - conductive atomic force microscopy (cAFM)
KW  - 2DEG density
KW  - vanadium dioxide
KW  - interface traps
KW  - potential drop width (PDW)
KW  - pattern recognition
KW  - drain-induced barrier lowering (DIBL)
KW  - atomic layer deposition (ALD)
KW  - normally off power devices
KW  - gate-induced drain leakage (GIDL)
KW  - insulator–metal transition (IMT)
KW  - zinc oxide
KW  - synaptic device
KW  - subthreshold slope (SS)
KW  - landing
KW  - silicon
KW  - corner-effect
KW  - conditioned reflex
KW  - quantum dot
KW  - gallium nitride
KW  - bismuth ions
KW  - conduction band offset
KW  - variational form
N1  - Open Access
N2  - As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry
UR  - https://mdpi.com/books/pdfview/book/1423
UR  - https://directory.doabooks.org/handle/20.500.12854/54256
ER  -