| 000 | 04899naaaa2201093uu 4500 | ||
|---|---|---|---|
| 001 | https://directory.doabooks.org/handle/20.500.12854/68646 | ||
| 005 | 20220219222540.0 | ||
| 020 | _abooks978-3-03936-011-6 | ||
| 020 | _a9783039360109 | ||
| 020 | _a9783039360116 | ||
| 024 | 7 |
_a10.3390/books978-3-03936-011-6 _cdoi |
|
| 041 | 0 | _aEnglish | |
| 042 | _adc | ||
| 072 | 7 |
_aTBX _2bicssc |
|
| 100 | 1 |
_aSaddow, Stephen Edward _4edt |
|
| 700 | 1 |
_aAlquier, Daniel _4edt |
|
| 700 | 1 |
_aWang, Jing _4edt |
|
| 700 | 1 |
_aLa Via, Francesco _4edt |
|
| 700 | 1 |
_aFraga, Mariana _4edt |
|
| 700 | 1 |
_aSaddow, Stephen Edward _4oth |
|
| 700 | 1 |
_aAlquier, Daniel _4oth |
|
| 700 | 1 |
_aWang, Jing _4oth |
|
| 700 | 1 |
_aLa Via, Francesco _4oth |
|
| 700 | 1 |
_aFraga, Mariana _4oth |
|
| 245 | 1 | 0 | _aSiC based Miniaturized Devices |
| 260 |
_aBasel, Switzerland _bMDPI - Multidisciplinary Digital Publishing Institute _c2020 |
||
| 300 | _a1 electronic resource (170 p.) | ||
| 506 | 0 |
_aOpen Access _2star _fUnrestricted online access |
|
| 520 | _aMEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense. | ||
| 540 |
_aCreative Commons _fhttps://creativecommons.org/licenses/by/4.0/ _2cc _4https://creativecommons.org/licenses/by/4.0/ |
||
| 546 | _aEnglish | ||
| 650 | 7 |
_aHistory of engineering & technology _2bicssc |
|
| 653 | _ahigh-power impulse magnetron sputtering (HiPIMS) | ||
| 653 | _asilicon carbide | ||
| 653 | _aaluminum nitride | ||
| 653 | _athin film | ||
| 653 | _aRutherford backscattering spectrometry (RBS) | ||
| 653 | _agrazing incidence X-ray diffraction (GIXRD) | ||
| 653 | _aRaman spectroscopy | ||
| 653 | _a6H-SiC | ||
| 653 | _aindentation | ||
| 653 | _adeformation | ||
| 653 | _amaterial removal mechanisms | ||
| 653 | _acritical load | ||
| 653 | _a4H-SiC | ||
| 653 | _acritical depth of cut | ||
| 653 | _aBerkovich indenter | ||
| 653 | _acleavage strength | ||
| 653 | _ananoscratching | ||
| 653 | _apower electronics | ||
| 653 | _ahigh-temperature converters | ||
| 653 | _aMEMS devices | ||
| 653 | _aSiC power electronic devices | ||
| 653 | _aneural interface | ||
| 653 | _aneural probe | ||
| 653 | _aneural implant | ||
| 653 | _amicroelectrode array | ||
| 653 | _aMEA | ||
| 653 | _aSiC | ||
| 653 | _a3C-SiC | ||
| 653 | _adoped SiC | ||
| 653 | _an-type | ||
| 653 | _ap-type | ||
| 653 | _aamorphous SiC | ||
| 653 | _aepitaxial growth | ||
| 653 | _aelectrochemical characterization | ||
| 653 | _aMESFET | ||
| 653 | _asimulation | ||
| 653 | _aPAE | ||
| 653 | _abulk micromachining | ||
| 653 | _aelectrochemical etching | ||
| 653 | _acircular membrane | ||
| 653 | _abulge test | ||
| 653 | _avibrometry | ||
| 653 | _amechanical properties | ||
| 653 | _aYoung’s modulus | ||
| 653 | _aresidual stress | ||
| 653 | _aFEM | ||
| 653 | _asemiconductor radiation detector | ||
| 653 | _amicrostrip detector | ||
| 653 | _apower module | ||
| 653 | _anegative gate-source voltage spike | ||
| 653 | _a4H-SiC, epitaxial layer | ||
| 653 | _aSchottky barrier | ||
| 653 | _aradiation detector | ||
| 653 | _apoint defects | ||
| 653 | _adeep level transient spectroscopy (DLTS) | ||
| 653 | _athermally stimulated current spectroscopy (TSC) | ||
| 653 | _aelectron beam induced current spectroscopy (EBIC) | ||
| 653 | _apulse height spectroscopy (PHS) | ||
| 653 | _an/a | ||
| 856 | 4 | 0 |
_awww.oapen.org _uhttps://mdpi.com/books/pdfview/book/2408 _70 _zDOAB: download the publication |
| 856 | 4 | 0 |
_awww.oapen.org _uhttps://directory.doabooks.org/handle/20.500.12854/68646 _70 _zDOAB: description of the publication |
| 999 |
_c47864 _d47864 |
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