| 000 | 05703naaaa2201417uu 4500 | ||
|---|---|---|---|
| 001 | https://directory.doabooks.org/handle/20.500.12854/54256 | ||
| 005 | 20220220090108.0 | ||
| 020 | _abooks978-3-03921-226-2 | ||
| 020 | _a9783039212255 | ||
| 020 | _a9783039212262 | ||
| 024 | 7 |
_a10.3390/books978-3-03921-226-2 _cdoi |
|
| 041 | 0 | _aEnglish | |
| 042 | _adc | ||
| 100 | 1 |
_aLi, Qiliang _4auth |
|
| 700 | 1 |
_aZhu, Hao _4auth |
|
| 245 | 1 | 0 | _aNanoelectronic Materials, Devices and Modeling |
| 260 |
_bMDPI - Multidisciplinary Digital Publishing Institute _c2019 |
||
| 300 | _a1 electronic resource (242 p.) | ||
| 506 | 0 |
_aOpen Access _2star _fUnrestricted online access |
|
| 520 | _aAs CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry. | ||
| 540 |
_aCreative Commons _fhttps://creativecommons.org/licenses/by-nc-nd/4.0/ _2cc _4https://creativecommons.org/licenses/by-nc-nd/4.0/ |
||
| 546 | _aEnglish | ||
| 653 | _aquantum mechanical | ||
| 653 | _an/a | ||
| 653 | _aneuromorphic computation | ||
| 653 | _aoff-current (Ioff) | ||
| 653 | _adouble-gate tunnel field-effect-transistor | ||
| 653 | _atopological insulator | ||
| 653 | _aback current blocking layer (BCBL) | ||
| 653 | _aCMOS power amplifier IC | ||
| 653 | _ainformation integration | ||
| 653 | _adistributed Bragg | ||
| 653 | _aspike-timing-dependent plasticity | ||
| 653 | _aelectron affinity | ||
| 653 | _aenhancement-mode | ||
| 653 | _acurrent collapse | ||
| 653 | _agallium nitride (GaN) | ||
| 653 | _aband-to-band tunneling | ||
| 653 | _avertical field-effect transistor (VFET) | ||
| 653 | _aionic liquid | ||
| 653 | _aluminescent centres | ||
| 653 | _athermal coupling | ||
| 653 | _avision localization | ||
| 653 | _aPC1D | ||
| 653 | _aUAV | ||
| 653 | _aZnO/Si | ||
| 653 | _adual-switching transistor | ||
| 653 | _amemristor | ||
| 653 | _afield-effect transistor | ||
| 653 | _ahigher order synchronization | ||
| 653 | _ashallow trench isolation (STI) | ||
| 653 | _amemristive device | ||
| 653 | _aon-current (Ion) | ||
| 653 | _alow voltage | ||
| 653 | _areflection transmision method | ||
| 653 | _adielectric layer | ||
| 653 | _asource/drain (S/D) | ||
| 653 | _ahigh efficiency | ||
| 653 | _ananostructure synthesis | ||
| 653 | _aInAlN/GaN heterostructure | ||
| 653 | _asupercapacitor | ||
| 653 | _ahigh-electron mobility transistor (HEMTs) | ||
| 653 | _aheterojunction | ||
| 653 | _ap-GaN | ||
| 653 | _arecessed channel array transistor (RCAT) | ||
| 653 | _agate field effect | ||
| 653 | _acharge injection | ||
| 653 | _asaddle FinFET (S-FinFET) | ||
| 653 | _aL-shaped tunnel field-effect-transistor | ||
| 653 | _aconductivity | ||
| 653 | _aenergy storage | ||
| 653 | _ahierarchical | ||
| 653 | _aPECVD | ||
| 653 | _asample grating | ||
| 653 | _aMISHEMT | ||
| 653 | _abistability | ||
| 653 | _athreshold voltage (VTH) | ||
| 653 | _abandgap tuning | ||
| 653 | _aoscillatory neural networks | ||
| 653 | _aUV irradiation | ||
| 653 | _aMott transition | ||
| 653 | _athird harmonic tuning | ||
| 653 | _atopological magnetoelectric effect | ||
| 653 | _across-gain modulation | ||
| 653 | _a2D material | ||
| 653 | _asolar cells | ||
| 653 | _asilicon on insulator (SOI) | ||
| 653 | _aGreen’s function | ||
| 653 | _aoptoelectronic devices | ||
| 653 | _asemiconductor optical amplifier | ||
| 653 | _aZnO films | ||
| 653 | _agraphene | ||
| 653 | _aAlGaN/GaN | ||
| 653 | _apolarization effect | ||
| 653 | _atwo-photon process | ||
| 653 | _aconductive atomic force microscopy (cAFM) | ||
| 653 | _a2DEG density | ||
| 653 | _avanadium dioxide | ||
| 653 | _ainterface traps | ||
| 653 | _apotential drop width (PDW) | ||
| 653 | _apattern recognition | ||
| 653 | _adrain-induced barrier lowering (DIBL) | ||
| 653 | _aatomic layer deposition (ALD) | ||
| 653 | _anormally off power devices | ||
| 653 | _agate-induced drain leakage (GIDL) | ||
| 653 | _ainsulator–metal transition (IMT) | ||
| 653 | _azinc oxide | ||
| 653 | _asynaptic device | ||
| 653 | _asubthreshold slope (SS) | ||
| 653 | _alanding | ||
| 653 | _asilicon | ||
| 653 | _acorner-effect | ||
| 653 | _aconditioned reflex | ||
| 653 | _aquantum dot | ||
| 653 | _agallium nitride | ||
| 653 | _abismuth ions | ||
| 653 | _aconduction band offset | ||
| 653 | _avariational form | ||
| 856 | 4 | 0 |
_awww.oapen.org _uhttps://mdpi.com/books/pdfview/book/1423 _70 _zDOAB: download the publication |
| 856 | 4 | 0 |
_awww.oapen.org _uhttps://directory.doabooks.org/handle/20.500.12854/54256 _70 _zDOAB: description of the publication |
| 999 |
_c77448 _d77448 |
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