000			04377naaaa2200817uu 4500
001			https://directory.doabooks.org/handle/20.500.12854/77105
005			20220220103613.0
020			_abooks978-3-0365-1521-2
020			_a9783036515229
020			_a9783036515212
024	7		_a10.3390/books978-3-0365-1521-2 _cdoi
041	0		_aEnglish
042			_adc
072		7	_aTB _2bicssc
100	1		_aPiotrowska, Anna B. _4edt
700	1		_aKamińska, Eliana _4edt
700	1		_aWojtasiak, Wojciech _4edt
700	1		_aPiotrowska, Anna B. _4oth
700	1		_aKamińska, Eliana _4oth
700	1		_aWojtasiak, Wojciech _4oth
245	1	0	_aMicro- and Nanotechnology of Wide Bandgap Semiconductors
260			_aBasel, Switzerland _bMDPI - Multidisciplinary Digital Publishing Institute _c2021
300			_a1 electronic resource (114 p.)
506	0		_aOpen Access _2star _fUnrestricted online access
520			_aOwing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.
540			_aCreative Commons _fhttps://creativecommons.org/licenses/by/4.0/ _2cc _4https://creativecommons.org/licenses/by/4.0/
546			_aEnglish
650		7	_aTechnology: general issues _2bicssc
653			_aGaN HEMT
653			_aself-heating effect
653			_amicrowave power amplifier
653			_athermal impedance
653			_athermal time constant
653			_athermal equivalent circuit
653			_aGaN
653			_acrystal growth
653			_aammonothermal method
653			_aHVPE
653			_aion implantation
653			_agallium nitride
653			_athermodynamics
653			_aultra-high-pressure annealing
653			_adiffusion
653			_adiffusion coefficients
653			_amolecular beam epitaxy
653			_anitrides
653			_alaser diode
653			_atunnel junction
653			_aLTE
653			_aAlN
653			_aAlGaN/GaN
653			_ainterface state density
653			_aconductance-frequency
653			_aMISHEMT
653			_agallium nitride nanowires
653			_apolarity
653			_aKelvin probe force microscopy
653			_aselective area growth
653			_aselective epitaxy
653			_aAlGaN/GaN heterostructures
653			_aedge effects
653			_aeffective diffusion length
653			_aMOVPE
653			_ananowires
653			_aAlGaN
653			_aLEDs
653			_agrowth polarity
653			_an/a
856	4	0	_awww.oapen.org _uhttps://mdpi.com/books/pdfview/book/4724 _70 _zDOAB: download the publication
856	4	0	_awww.oapen.org _uhttps://directory.doabooks.org/handle/20.500.12854/77105 _70 _zDOAB: description of the publication
999			_c81694 _d81694