Nanoelectronic Materials, Devices and Modeling
Li, Qiliang
Nanoelectronic Materials, Devices and Modeling - MDPI - Multidisciplinary Digital Publishing Institute 2019 - 1 electronic resource (242 p.)
Open Access
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
Creative Commons
English
books978-3-03921-226-2 9783039212255 9783039212262
10.3390/books978-3-03921-226-2 doi
quantum mechanical n/a neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green’s function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator–metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form
Nanoelectronic Materials, Devices and Modeling - MDPI - Multidisciplinary Digital Publishing Institute 2019 - 1 electronic resource (242 p.)
Open Access
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
Creative Commons
English
books978-3-03921-226-2 9783039212255 9783039212262
10.3390/books978-3-03921-226-2 doi
quantum mechanical n/a neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green’s function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator–metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form