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Nanoelectronic Materials, Devices and Modeling (Record no. 77448)

MARC details
000 -LEADER
fixed length control field	05703naaaa2201417uu 4500
001 - CONTROL NUMBER
control field	https://directory.doabooks.org/handle/20.500.12854/54256
005 - DATE AND TIME OF LATEST TRANSACTION
control field	20220220090108.0
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number	books978-3-03921-226-2
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number	9783039212255
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number	9783039212262
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code	10.3390/books978-3-03921-226-2
Terms of availability	doi
041 0# - LANGUAGE CODE
Language code of text/sound track or separate title	English
042 ## - AUTHENTICATION CODE
Authentication code	dc
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name	Li, Qiliang
Relationship	auth
245 10 - TITLE STATEMENT
Title	Nanoelectronic Materials, Devices and Modeling
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc.	MDPI - Multidisciplinary Digital Publishing Institute
Date of publication, distribution, etc.	2019
300 ## - PHYSICAL DESCRIPTION
Extent	1 electronic resource (242 p.)
506 0# - RESTRICTIONS ON ACCESS NOTE
Terms governing access	Open Access
Source of term	star
Standardized terminology for access restriction	Unrestricted online access
520 ## - SUMMARY, ETC.
Summary, etc.	As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
540 ## - TERMS GOVERNING USE AND REPRODUCTION NOTE
Terms governing use and reproduction	Creative Commons
Use and reproduction rights	https://creativecommons.org/licenses/by-nc-nd/4.0/
Source of term	cc
--	https://creativecommons.org/licenses/by-nc-nd/4.0/
546 ## - LANGUAGE NOTE
Language note	English
653 ## - INDEX TERM--UNCONTROLLED
Uncontrolled term	quantum mechanical
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Uncontrolled term	n/a
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Uncontrolled term	neuromorphic computation
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Uncontrolled term	off-current (Ioff)
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Uncontrolled term	double-gate tunnel field-effect-transistor
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Uncontrolled term	topological insulator
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Uncontrolled term	back current blocking layer (BCBL)
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Uncontrolled term	CMOS power amplifier IC
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Uncontrolled term	information integration
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Uncontrolled term	distributed Bragg
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Uncontrolled term	spike-timing-dependent plasticity
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Uncontrolled term	electron affinity
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Uncontrolled term	enhancement-mode
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Uncontrolled term	current collapse
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Uncontrolled term	gallium nitride (GaN)
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Uncontrolled term	band-to-band tunneling
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Uncontrolled term	vertical field-effect transistor (VFET)
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Uncontrolled term	ionic liquid
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Uncontrolled term	luminescent centres
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Uncontrolled term	thermal coupling
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Uncontrolled term	vision localization
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Uncontrolled term	PC1D
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Uncontrolled term	UAV
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Uncontrolled term	ZnO/Si
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Uncontrolled term	dual-switching transistor
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Uncontrolled term	memristor
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Uncontrolled term	field-effect transistor
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Uncontrolled term	higher order synchronization
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Uncontrolled term	shallow trench isolation (STI)
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Uncontrolled term	memristive device
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Uncontrolled term	on-current (Ion)
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Uncontrolled term	low voltage
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Uncontrolled term	reflection transmision method
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Uncontrolled term	dielectric layer
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Uncontrolled term	source/drain (S/D)
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Uncontrolled term	high efficiency
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Uncontrolled term	nanostructure synthesis
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Uncontrolled term	InAlN/GaN heterostructure
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Uncontrolled term	supercapacitor
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Uncontrolled term	high-electron mobility transistor (HEMTs)
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Uncontrolled term	heterojunction
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Uncontrolled term	p-GaN
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Uncontrolled term	recessed channel array transistor (RCAT)
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Uncontrolled term	gate field effect
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Uncontrolled term	charge injection
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Uncontrolled term	saddle FinFET (S-FinFET)
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Uncontrolled term	L-shaped tunnel field-effect-transistor
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Uncontrolled term	conductivity
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Uncontrolled term	energy storage
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Uncontrolled term	hierarchical
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Uncontrolled term	PECVD
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Uncontrolled term	sample grating
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Uncontrolled term	MISHEMT
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Uncontrolled term	bistability
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Uncontrolled term	threshold voltage (VTH)
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Uncontrolled term	bandgap tuning
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Uncontrolled term	oscillatory neural networks
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Uncontrolled term	UV irradiation
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Uncontrolled term	Mott transition
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Uncontrolled term	third harmonic tuning
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Uncontrolled term	topological magnetoelectric effect
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Uncontrolled term	cross-gain modulation
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Uncontrolled term	2D material
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Uncontrolled term	solar cells
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Uncontrolled term	silicon on insulator (SOI)
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Uncontrolled term	Green’s function
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Uncontrolled term	optoelectronic devices
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Uncontrolled term	semiconductor optical amplifier
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Uncontrolled term	ZnO films
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Uncontrolled term	graphene
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Uncontrolled term	AlGaN/GaN
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Uncontrolled term	polarization effect
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Uncontrolled term	two-photon process
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Uncontrolled term	conductive atomic force microscopy (cAFM)
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Uncontrolled term	2DEG density
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Uncontrolled term	vanadium dioxide
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Uncontrolled term	interface traps
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Uncontrolled term	potential drop width (PDW)
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Uncontrolled term	pattern recognition
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Uncontrolled term	drain-induced barrier lowering (DIBL)
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Uncontrolled term	atomic layer deposition (ALD)
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Uncontrolled term	normally off power devices
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Uncontrolled term	gate-induced drain leakage (GIDL)
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Uncontrolled term	insulator–metal transition (IMT)
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Uncontrolled term	zinc oxide
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Uncontrolled term	synaptic device
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Uncontrolled term	subthreshold slope (SS)
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Uncontrolled term	landing
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Uncontrolled term	silicon
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Uncontrolled term	corner-effect
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Uncontrolled term	conditioned reflex
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Uncontrolled term	quantum dot
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Uncontrolled term	gallium nitride
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Uncontrolled term	bismuth ions
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Uncontrolled term	conduction band offset
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Uncontrolled term	variational form
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name	Zhu, Hao
Relationship	auth
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name	www.oapen.org
Uniform Resource Identifier	<a href="https://mdpi.com/books/pdfview/book/1423">https://mdpi.com/books/pdfview/book/1423</a>
Access status	0
Public note	DOAB: download the publication
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name	www.oapen.org
Uniform Resource Identifier	<a href="https://directory.doabooks.org/handle/20.500.12854/54256">https://directory.doabooks.org/handle/20.500.12854/54256</a>
Access status	0
Public note	DOAB: description of the publication

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