Miniaturized Transistors (Record no. 48489)

MARC details
000 -LEADER
fixed length control field 04956naaaa2201189uu 4500
001 - CONTROL NUMBER
control field https://directory.doabooks.org/handle/20.500.12854/53550
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220219223822.0
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number books978-3-03921-011-4
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783039210107
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783039210114
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.3390/books978-3-03921-011-4
Terms of availability doi
041 0# - LANGUAGE CODE
Language code of text/sound track or separate title English
042 ## - AUTHENTICATION CODE
Authentication code dc
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Grasser, Tibor
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245 10 - TITLE STATEMENT
Title Miniaturized Transistors
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. MDPI - Multidisciplinary Digital Publishing Institute
Date of publication, distribution, etc. 2019
300 ## - PHYSICAL DESCRIPTION
Extent 1 electronic resource (202 p.)
506 0# - RESTRICTIONS ON ACCESS NOTE
Terms governing access Open Access
Source of term star
Standardized terminology for access restriction Unrestricted online access
520 ## - SUMMARY, ETC.
Summary, etc. What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
540 ## - TERMS GOVERNING USE AND REPRODUCTION NOTE
Terms governing use and reproduction Creative Commons
Use and reproduction rights https://creativecommons.org/licenses/by-nc-nd/4.0/
Source of term cc
-- https://creativecommons.org/licenses/by-nc-nd/4.0/
546 ## - LANGUAGE NOTE
Language note English
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700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Filipovic, Lado
Relationship auth
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://mdpi.com/books/pdfview/book/1370">https://mdpi.com/books/pdfview/book/1370</a>
Access status 0
Public note DOAB: download the publication
856 40 - ELECTRONIC LOCATION AND ACCESS
Host name www.oapen.org
Uniform Resource Identifier <a href="https://directory.doabooks.org/handle/20.500.12854/53550">https://directory.doabooks.org/handle/20.500.12854/53550</a>
Access status 0
Public note DOAB: description of the publication

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